document number: 94012 for technical ques tions within your region, please cont act one of the following: www.vishay.com revision: 17-feb-11 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com 1 ultrafast rectifier, 2 x 15 a fred pt ? vs-30cph03pbf vishay semiconductors features ? ultrafast recovery time ? low forward voltage drop ? 175 c operating junction temperature ? low leakage current ? compliant to rohs directive 2002/95/ec ? designed and qualified for industrial level description/applications 300 v series are the state of the art ultrafast recovery rectifiers designed with opti mized performance of forward voltage drop and ultrafast recovery time. the planar structure and the plat inum doped life time control guarantee the best overall performance, ruggedness and reliability characteristics. these devices are intended for use in the output rectification stage of smps, ups, dc/dc converters as well as freewheeling diodes in low voltage inverters and chopper motor drives. their extremely optimized stored charge and low recovery current minimize the switch ing losses and reduce over dissipation in the switchin g element and snubbers. product summary package to-247ac i f(av) 2 x 15 a v r 300 v v f at i f 1.25 v t rr typ. see recovery table t j max. 175 c diode variation common cathode base common cathode common cathode 2 2 13 anode 1 anode 2 to-247ac absolute maximum ratings parameter symbol test conditions values units repetitive peak reverse voltage v rrm 300 v average rectified forward current per leg i f(av) t c = 142 c 15 a total device 30 non-repetitive peak surge current per leg i fsm t j = 25 c 140 operating junction and storage temperatures t j , t stg - 65 to 175 c electrical specifications (t j = 25 c unless otherwise specified) parameter symbol test conditi ons min. typ. max. units breakdown voltage, blocking voltage v br , v r i r = 100 a 300 - - v forward voltage v f i f = 15 a - 1.05 1.25 i f = 15 a, t j = 125 c - 0.85 1.00 reverse leakage current i r v r = v r rated - 0.05 40 a t j = 125 c, v r = v r rated - 12 400 junction capacitance c t v r = 300 v - 45 - pf series inductance l s measured lead to lead 5 mm from package body - 8 - nh
www.vishay.com for technical qu estions within your region, please contact one of the fo llowing: document number: 94012 2 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com revision: 17-feb-11 vs-30cph03pbf vishay semiconductors ultrafast rectifier, 2 x 15 a fred pt ? dynamic recovery characteristics (t j = 25 c unless otherwise specified) parameter symbol test conditi ons min. typ. max. units reverse recovery time t rr i f = 1.0 a, di f /dt = 50 a/s, v r = 30 v - - 40 ns t j = 25 c i f = 15 a di f /dt = - 200 a/s v r = 200 v -32- t j = 125 c - 45 - peak recovery current i rrm t j = 25 c - 2.4 - a t j = 125 c - 6.1 - reverse recovery charge q rr t j = 25 c - 38 - nc t j = 125 c - 137 - thermal - mechanical specifications parameter symbol test conditi ons min. typ. max. units maximum junction and storage temperature range t j , t stg - 65 - 175 c thermal resistance, junction to case per leg r thjc -0.92.0 c/w thermal resistance, junction to am bient per leg r thja typical socket mount - - 40 thermal resistance, case to heatsink r thcs mounting surface, flat, smooth and greased -0.4- weight -6.0- g -0.21- oz. mounting torque 6.0 (5.0) - 12 (10) kgf cm (lbf ? in) marking device case style to-247ac 30cph03
document number: 94012 for technical ques tions within your region, please cont act one of the following: www.vishay.com revision: 17-feb-11 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com 3 vs-30cph03pbf ultrafast rectifier, 2 x 15 a fred pt ? vishay semiconductors fig. 1 - typical forward voltage drop characteristics fig. 2 - typical values of reverse current vs. reverse voltage fig. 3 - typical junction capacitance vs. reverse voltage fig. 4 - maximum thermal impedance z thjc characteristics 100 10 1 0.4 0.6 0.8 1.0 1.2 1.4 1.6 i f - instantaneous forward current (a) v f - forward voltage drop (v) t j = 175 c t j = 125 c t j = 25 c 0 50 100 150 200 250 300 i r - reverse current (a) v r - reverse voltage (v) 0.001 0.01 0.1 1 10 1000 100 t j = 175 c t j = 150 c t j = 100 c t j = 125 c t j = 25 c 1000 100 10 0 50 100 150 200 250 300 c t - junction capacitance (pf) v r - reverse voltage (v) t j = 25 c 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 t 1 - rectangular pulse duration (s) z thjc - thermal impedance (c/w) . p dm t 1 t 2 notes: 1. duty factor d = t 1 /t 2 2. peak t j = p dm x z thjc + t c single pulse (thermal resistance) d = 0.50 d = 0.20 d = 0.10 d = 0.05 d = 0.02 d = 0.01
www.vishay.com for technical qu estions within your region, please contact one of the fo llowing: document number: 94012 4 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com revision: 17-feb-11 vs-30cph03pbf vishay semiconductors ultrafast rectifier, 2 x 15 a fred pt ? fig. 5 - maximum allowable case temperature vs. average forward current fig. 6 - forward power loss characteristics fig. 7 - typical reverse recovery time vs. di f /dt fig. 8 - typical stored charge vs. di f /dt note (1) formula used: t c = t j - (pd + pd rev ) x r thjc ; pd = forward power loss = i f(av) x v fm at (i f(av) /d) (see fig. 6); pd rev = inverse power loss = v r1 x i r (1 - d); i r at v r1 = rated v r 0 5 10 15 20 25 allowable case temperature (c) i f(av) - average forward current (a) 120 130 140 150 160 170 180 see note (1) square wave (d = 0.50) rated v r applied dc 0 5 10 15 20 25 average power loss (w) i f(av) - average forward current (a) 0 2 4 6 8 10 12 14 16 18 20 22 d = 0.01 d = 0.02 d = 0.05 d = 0.10 d = 0.20 d = 0.50 rms limit dc 10 100 1000 t rr (ns) di f /dt (a/s) 100 i f = 30 a , t j = 25 c i f = 30 a , t j = 125 c 1000 10 100 1000 q rr (nc) di f /dt (a/s) 100 i f = 30 a , t j = 25 c i f = 30 a , t j = 125 c
document number: 94012 for technical ques tions within your region, please cont act one of the following: www.vishay.com revision: 17-feb-11 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com 5 vs-30cph03pbf ultrafast rectifier, 2 x 15 a fred pt ? vishay semiconductors fig. 9 - reverse recovery parameter test circuit fig. 10 - reverse recovery waveform and definitions irfp250 d.u.t. l = 70 h v r = 200 v 0.01 g d s di f /dt adju s t q rr 0.5 i rrm di (rec)m /dt 0.75 i rrm i rrm t rr t b t a i f di f /dt 0 (1) (2) (3) (4) (5) (1) di f /dt - rate of change of current through zero cro ss ing (2) i rrm - peak rever s e recovery current (3) t rr - rever s e recovery time mea s ured from zero cro ss ing point of negative going i f to point where a line pa ss ing through 0.75 i rrm and 0.50 i rrm extrapolated to zero current. (4) q rr - area under curve dened by t rr and i rrm t rr x i rrm 2 q rr = (5) di (rec)m /dt - peak rate of change of current during t b portion of t rr
www.vishay.com for technical qu estions within your region, please contact one of the fo llowing: document number: 94012 6 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com revision: 17-feb-11 vs-30cph03pbf vishay semiconductors ultrafast rectifier, 2 x 15 a fred pt ? ordering information table links to related documents dimensions www.vishay.com/doc?95223 part marking information www.vishay.com/doc?95226 2 - current rating (30 = 30 a) 3 - circuit configuration 4 - package: 4 p = to-247 5 - h = hyperfast recovery 6 - voltage rating (03 = 300 v) tube standard pack quantity: 25 pieces 1 - vishay semiconductors product 7 - pbf = lead (pb)-free device code 5 1 3 2 4 6 7 vs- 30 c p h 03 pbf
outline dimensions www.vishay.com vishay semiconductors revision: 16-jun-11 1 document number: 95223 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 dimensions in millimeters and inches notes (1) dimensioning and tolera ncing per asme y14.5m-1994 (2) contour of slot optional (3) dimension d and e do not include mold flas h. mold flash shall not exceed 0.127 mm (0 .005") per side. these dimensions are measu red at the outermost extremes of the plastic body (4) thermal pad contour optional with dimensions d1 and e1 (5) lead finish uncontrolled in l1 (6) ? p to have a maximum draft angle of 1.5 to the top of the part with a maximum hole diameter of 3.91 mm (0.154") (7) outline conforms to jede c outline to-247 with ex ception of dimension c symbol millimeters inches notes symbol millimeters inches notes min. max. min. max. min. max. min. max. a 4.65 5.31 0.183 0.209 d2 0.51 1.30 0.020 0.051 a1 2.21 2.59 0.087 0.102 e 15.29 15.87 0.602 0.625 3 a2 1.50 2.49 0.059 0.098 e1 13.72 - 0.540 - b 0.99 1.40 0.039 0.055 e 5.46 bsc 0.215 bsc b1 0.99 1.35 0.039 0.053 fk 2.54 0.010 b2 1.65 2.39 0.065 0.094 l 14.20 16.10 0.559 0.634 b3 1.65 2.37 0.065 0.094 l1 3.71 4.29 0.146 0.169 b4 2.59 3.43 0.102 0.135 n 7.62 bsc 0.3 b5 2.59 3.38 0.102 0.133 ? p 3.56 3.66 0.14 0.144 c 0.38 0.86 0.015 0.034 ? p1 - 6.98 - 0.275 c1 0.38 0.76 0.015 0.030 q 5.31 5.69 0.209 0.224 d 19.71 20.70 0.776 0.815 3 r 4.52 5.49 1.78 0.216 d1 13.08 - 0.515 - 4 s 5.51 bsc 0.217 bsc 0.10 a c m m e n (2) (3) (4) (4) (2) r/2 b 2 x r s d see view b 2 x e b4 3 x b 2 x b2 l c (5) l1 1 2 3 q d a a2 a a a1 c ? k b d m m a (6) ? p (datum b) fp1 d1 (4) 4 e1 0.01 b d m m view a - a thermal pad d2 dde e c c view b (b1, b3, b5) base metal c1 (b, b2, b4) section c - c, d - d, e - e (c) planting lead assignments diodes 1. - anode/open 2. - cathode 3. - anode
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